Uniquely Functional Two-Terminal Nanoelectronic Memristor Device

Description:

Project ID:  D2011-28

 

Background:

The goal for the last three decades of those in the logic and memory device market has been to increase the number of components on an integrated circuit chip. This technology provides for a new method of storing data through modulating the conductance on a two-terminal device--an improvement from current memory technologies that require three terminals.

 

Invention Description:

Unique functionality allows heterogeneous integration of magnetic and electronic charge based memory components, and offers non-volatile memory, and high ROFF/ RON ratio. In addition, the technology is highly scalable, uses CMOS-compatible materials and needs no electroforming.

 

Advantages:

·       Less physical space needed than previous technology allowing for increased capacity

·       Higher ON/OFF conductance ratio than current technology

·       Significantly faster switching speed

·       Reduced overall power consumption, allowing use in higher power devices

·       Reliable operation provides safer, faster access to stored data

 

Applications:

·       Consumer electronics such as cell phones, gaming consoles, portable electronic devices and others

 

IP Status:  United States Patent No. 8,502,343 B1
Patent Information:
Category(s):
Engineering
For Information, Contact:
Anne Izzi
Licensing Associate
The University of Toledo
419 530 6226
anne.izzi@utoledo.edu
Inventors:
Rashmi Jha
Branden Long
Jorhan Ordosgoitti
Keywords:
Circuit chip
Memory device
Memristor
Nanoelectric