Filling Pin Holes, Weak Shunts, and Scribe Lines of Photovoltaic Devices

Description:

Project ID:  D2008-08

 

Background:

During the fabrication of semiconductor devices, undesirable and detrimental holes or scribe lines are often created through the layers of the device.  These structural defects often expose the transparent conductor layer and when the final metal layer is applied an electrical contact called a shunt is created between the metal electrode and the transparent electrode.  The presence of various undesirable structural defects and nonuniformities are inherent in such device configurations and leads to an overall decrease in the efficiency of the semiconductor device.

Invention Description:

System has been developed that selectively fills structural defects and nonuniformities with an insulator material or with a material of poor electrical conductivity prior to fabrication of the metal layer to increase efficiency of a semiconductor device. With structural defects and nonuniformities thus selectively filled, the metal electrode can be applied and the material filling the hole prevents electrical contact between the metal electrode and the transparent electrode.

Advantages:

·       Increased panel wattage

·       Increased productivity with higher yields

·       Reduced scrap

·       Improved panel electrical uniformity and stability

 

Applications:

·       Thin film semiconductor devices

·       Photovoltaics

·       Active matrix liquid crystal displays

·       Light emitting devices (LED)

IP Status: U.S. Utility patent #8,574,944 B2

Patent Information:
Category(s):
Engineering
Photovoltaics
For Information, Contact:
Anne Izzi
Licensing Associate
The University of Toledo
419 530 6226
anne.izzi@utoledo.edu
Inventors:
Dean Giolando
Keywords:
Electrode
Nonuniformities
Photovoltaics
Shunt